PROCEDURE
Forward Characteristics of Germanium Diode:
(i) Select diode type as Germanium Diode
(ii) Set input DC voltage as 10 V
(iii) Set potential divider to minimum voltage position.(Set R=0 ohm.)
(iv) By varying (increasing) potential divider rheostat, vary diode voltage gradually and note down the corresponding readings of voltmeter and ammeter. Step Size is not fixed because of non linear curve and vary the X-axis variable (i.e. if output variation is more, decrease input step size and vice versa)..
(v) Tabulate different forward currents obtained for different forward voltages.
(vi) Plot the graph between forward currents and forward voltages from readings.
(vii) Find cut-in Voltage for Germanium P-N Junction diode.
(viii) Find static and dynamic resistances in forward biased condition for Ge P-N Junction diode from graph
Forward Characteristics of Silicon Diode:
(i) Select diode type as Silicon Diode
(ii) Set input DC voltage as 10 V
(iii) Set potential divider to minimum voltage position.(Set R=0 ohm.)
(iv) By varying (increasing) potential divider rheostat, vary diode voltage gradually and note down the corresponding readings of voltmeter and ammeter. Step Size is not fixed because of non linear curve and vary the X-axis variable (i.e. if output variation is more, decrease input step size and vice versa)..
(v) Tabulate different forward currents obtained for different forward voltages.
(vi) Plot the graph between forward currents and forward voltages from readings.
(vii) Find cut-in Voltage for Si P-N Junction diode.
(viii) Find static and dynamic resistances in forward biased condition for Si P-N Junction diode from graph